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Comptes Rendus Chimie
Sous presse. Epreuves corrigées par l'auteur. Disponible en ligne depuis le jeudi 1 mars 2012
Doi : 10.1016/j.crci.2012.01.010
Received : 12 December 2011 ;  accepted : 24 January 2012
Stability of InP oxide versus solvated electrons in liquid ammonia
 

A.-M. Gonçalves , N. Simon, S. Channoug, D. Aureau, C. Mathieu, A. Etcheberry
Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University, Versailles, France 

Corresponding author.
Abstract

In alkaline aqueous medium (pH 9), potassium ferricyanide was used as an oxidizing agent on InP. This electroless process was successfully controlled by capacity measurements, AFM and XPS analyses. For the first time, the chemical stability of the oxide has been studied against the strongest reducing agent in liquid ammonia (−50°C): the solvated electron. It was obtained in two ways; an electroless process which involved the addition of metallic potassium and by cathodic galvanostatic treatment on InP in neutral medium. As a first result, the electroless process required a strong rinsing step of the surface by pure liquid ammonia. As a second result, the galvanostatic process gave also promising results. A significant decrease of the amount of oxide was evidenced by capacity measurements, AFM and XPS analyses.


Keywords : Non-aqueous solvent, Liquid ammonia, III-V semiconductor, Solvated electron, Interface, Oxide surface




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