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Comptes Rendus Chimie
Sous presse. Epreuves corrigées par l'auteur. Disponible en ligne depuis le jeudi 2 août 2012
Doi : 10.1016/j.crci.2012.06.012
Received : 22 February 2012 ;  accepted : 28 June 2012
Epitaxial growth on porous GaAs substrates
 

Jan Grym a, ⁎ , Dušan Nohavica a, Petar Gladkov a, Eduard Hulicius b, Jiří Pangrác b, Kateřina Piksová c
a Institute of Photonics and Electronics AS CR, v.v.i., Chaberska 57, 18251 Praha 8, Czech Republic 
b Institute of Physics AS CR, v.v.i. Cukrovarnicka 10, 16200 Praha 6, Czech Republic 
c Faculty of Nuclear Sciences and Physical Engineering, CTU Prague, Břehová 7, 11519 Praha 1, Czech Republic 

Corresponding author.
Abstract

We report on the electrochemical preparation of porous GaAs substrates in fluoride-iodide aqueous electrolytes for the lattice mismatched epitaxial growth from the vapor phase. The aim is to gain control over the uniformity of the pore nucleation layer and pore branching below this layer to achieve structures with a high degree of porosity and periodicity while leaving minimum damage on the substrate surface. Layers of Inx Ga1-x As with varying In content are grown on GaAs substrates with different pore geometries and depths. Substantial differences in the surface morphology and photoluminescence efficiency of the layers grown on porous and conventional substrates are observed.


Keywords : Electrochemical etching, Porous semiconductors, Epitaxial growth, GaAs, MOVPE


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Introduction
Experimental
Results and discussion
Conclusions


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Start of article
Introduction
Experimental
Results and discussion
Conclusions
References