The impact of Cu leveling additives on electrodeposited Cu topography and subsequent planarization behaviour was studied on both the pattern and wafer scales. The leveling agent significantly reduces as-deposited Cu topography, especially “mounding”. The reduction in topography results in a higher effective Cu removal rate during subsequent Cu planarization, both at the pattern and wafer scales. On the wafer scale, this effect is more evident for lower overburdens as the topography must be eliminated in a shorter total polish time. For Cu electrodeposited from leveler additive-free chemistries, significant pattern-scale topography persists throughout almost the entire planarization process, whereas for Cu deposited using a leveling agent only very wide features (>100μm) show any significant topography evolution during Cu polish. It is shown that excess electrodeposited Cu topography can lead to poor in-plane Cu wiring leakage performance.